HIGH-FREQUENCY CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：0
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作者：
BURNS, JR
机构：
来源：
RCA REVIEW | 1967年 / 28卷 / 03期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：385 / +
页数：1
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