HIGH-FREQUENCY CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTOR

被引：0

|

作者：

BURNS, JR

机构：

来源：

RCA REVIEW | 1967年 / 28卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：385 / +

页数：1

相关论文

共 50 条

[31] CHANNEL SHAPE IN AN INSULATED GATE FIELD-EFFECT TRANSISTOR
GNADINGER, AP
TALLEY, HE
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (06): : 916 - +
[32] SPACE-CHARGE EFFECTS IN INSULATED-GATE FIELD-EFFECT TRIODE
WINSLOW, J
PROCEEDINGS OF THE IEEE, 1964, 52 (05) : 618 - &
[33] NEW APPROACH TO THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS
ELMANSY, YA
BOOTHROYD, AR
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 241 - 253
[34] NEW METHOD OF REDUCING INSTABILITY IN INSULATED-GATE FIELD-EFFECT TRANSISTORS
BRADLEY, J
ELECTRONICS LETTERS, 1967, 3 (11) : 526 - &
[35] HIGH-FREQUENCY NOISE OF JUNCTION FIELD-EFFECT TRANSISTOR
KLAASSEN, FM
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (07) : 368 - +
[36] NARROW GATE EFFECT ON DEPLETION MODE INSULATED GATE FIELD-EFFECT TRANSISTOR
HALDAR, S
KHANNA, MK
GUPTA, RS
SOLID-STATE ELECTRONICS, 1994, 37 (10) : 1717 - 1721
[37] High-frequency performance of diamond field-effect transistor
Taniuchi, H
Umezawa, H
Arima, T
Tachiki, M
Kawarada, H
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) : 390 - 392
[38] GATE CURRENT IN ALINAS/GAINAS HETEROSTRUCTURE INSULATED-GATE FIELD-EFFECT TRANSISTORS (HIGFETS)
KAMADA, M
ISHIKAWA, H
FENG, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1358 - 1363
[39] SB-IGFET - AN INSULATED-GATE FIELD-EFFECT TRANSISTOR USING SCHOTTKY BARRIER CONTACTS FOR SOURCE AND DRAIN
LEPSELTER, MP
SZE, SM
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (08): : 1400 - +
[40] Insulated-Gate Bipolar Transistor Rectifiers
Gelman, Vitaly
IEEE VEHICULAR TECHNOLOGY MAGAZINE, 2014, 9 (03): : 86 - 93

← 1 2 3 4 5 →