HIGH-FREQUENCY CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTOR

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作者：

BURNS, JR

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RCA REVIEW | 1967年 / 28卷 / 03期

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TM [电工技术]; TN [电子技术、通信技术];

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0808 ; 0809 ;

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页码：385 / +

页数：1

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