HIGH-FREQUENCY CHARACTERISTICS OF INSULATED-GATE FIELD-EFFECT TRANSISTOR

[1] CANDLER D, 1965, AUG INT J EL, V9, P181

[2] THE FIELD EFFECT TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06): : 1149 - 1189

[3] STRUCTURE-DETERMINED GAIN-BAND PRODUCT OF JUNCTION TRIODE TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (12): : 1924 - 1927

[4] FICH S, 1951, TRANSIENT ANALYSIS, P135

[5] CALCULATION OF HIGH-FREQUENCY CHARACTERISTICS OF THIN-FILM TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 88 - &

[6] HAUSER JR, 1965, T IEEE PTGED, VED12, P605

[7] HILDEBRAND FB, 1954, ADVANCED CALCULUS EN

[8] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[9] HOFSTEIN SR, 1965, T IEEE PTGED, VED12, P129

[10] KOLK P, 1966, FIELDEFFECT TRANSIST, pCH11

[1] CANDLER D, 1965, AUG INT J EL, V9, P181

[2] THE FIELD EFFECT TRANSISTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (06): : 1149 - 1189

[3] STRUCTURE-DETERMINED GAIN-BAND PRODUCT OF JUNCTION TRIODE TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (12): : 1924 - 1927

[4] FICH S, 1951, TRANSIENT ANALYSIS, P135

[5] CALCULATION OF HIGH-FREQUENCY CHARACTERISTICS OF THIN-FILM TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (01) : 88 - &

[6] HAUSER JR, 1965, T IEEE PTGED, VED12, P605

[7] HILDEBRAND FB, 1954, ADVANCED CALCULUS EN

[8] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &

[9] HOFSTEIN SR, 1965, T IEEE PTGED, VED12, P129

[10] KOLK P, 1966, FIELDEFFECT TRANSIST, pCH11