A simulation study on a novel trench SJ IGBT

被引：2
作者：
Wang Bo [1 ]
Tan Jingfei [1 ]
Zhang Wenliang [1 ]
Chu Weili [1 ]
Zhu Yangjun [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2012年 / 33卷 / 11期
关键词：
IGBT; superjunction; SJBT; charge imbalance; on-state voltage; breakdown voltage; turn-off loss;
D O I：
10.1088/1674-4926/33/11/114002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An overall analysis of the trench superjunction insulated gate bipolar transistor (SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TCAD. More specifically, simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V. At the same time, the turn-off loss is decreased by 50%. The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.
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收藏
页数：5
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