A simulation study on a novel trench SJ IGBT

An overall analysis of the trench superjunction insulated gate bipolar transistor (SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TCAD. More specifically, simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V. At the same time, the turn-off loss is decreased by 50%. The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.