SOME CHARACTERISTICS OF DISTRIBUTION OF RADIATION DEFECTS RESULTING FROM IMPLANTATION OF BORON IONS IN SILICON

被引：0
作者：
SKAKUN, NA [1 ]
DIKII, NP [1 ]
MATYASH, PP [1 ]
机构：
[1] ACAD SCI UKSSR,ENGN PHYS INST,KHARKOV,UKSSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 8卷 / 07期
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D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
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页码：854 / 855
页数：2
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    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (02): : 679 - +
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