INVESTIGATION OF TIN AS AN INTERLAYER FOR DIAMOND DEPOSITION ON STEEL

被引：34

作者：

LORENZ, HP

机构：

[1] Siemens AG, D-13623 Berlin

来源：

关键词：

DIAMOND FILMS; BUFFER LAYER; OXIDATION BEHAVIOR;

D O I：

10.1016/0925-9635(95)00282-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To develop a diffusion barrier layer for diamond deposition at high temperature onto steel, samples of steel coated with cathodic-arc-deposited and sputter-deposited titanium nitride were tempered under diamond-deposition conditions at temperatures up to 950 degrees C. Hardness of the steel and the adhesion were affected, no visible changes could be detected on sputtered TiN. Diamond was deposited by microwave plasma chemical vapour deposition onto steel samples coated with cathodic-arc-deposited TiN using substrate temperatures from 520 degrees C to 950 degrees C. The are-deposited TiN is not free enough from defects, so at temperatures >700 degrees C different reaction products can be observed and analyzed by electron-probe microanalysis. Depending on the temperature iron-chromium-carbon compounds and iron oxides can be seen, TiN reacts to become TiCxNy, and in some areas TiN delaminates.

引用

页码：1088 / 1092

页数：5

共 4 条

[1] GROWTH OF DIAMOND FILMS ON STAINLESS-STEEL [J].