EVOLUTION OF STRAIN RELAXATION IN STEP-GRADED SIGE/SI STRUCTURES

被引：56

作者：

MOONEY, PM ^{[1
]}

JORDANSWEET, JL ^{[1
]}

CHU, JO ^{[1
]}

LEGOUES, FK ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 26期

关键词：

D O I：

10.1063/1.114126

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strain relaxation in a series of step-graded SiGe/Si structures has been quantitatively investigated by high-resolution x-ray diffraction measurements. We show that beyond a critical thickness, dislocations nucleate continuously as layers with higher Ge mole fraction are added to the structure and that the mismatch strain at which nucleation occurs is therefore essentially constant. It had been found empirically that a lower growth temperature is required to suppress roughening of layers with higher Ge mole fraction, even in graded structures. We prove that this is not because the strain increases, but rather because of the lower melting temperature of layers with higher Ge content.© 1995 American Institute of Physics.

引用

页码：3642 / 3644

页数：3

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