NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION

被引：108

作者：

KIMOTO, T

ITOH, A

MATSUNAMI, H

SRIDHARA, S

CLEMEN, LL

DEVATY, RP

CHOYKE, WJ

DALIBOR, T

PEPPERMULLER, C

PENSL, G

机构：

[1] UNIV PITTSBURGH, DEPT PHYS & ASTRON, PITTSBURGH, PA 15260 USA

[2] UNIV ERLANGEN NURNBERG, LEHRSTUHL ANGEW PHYS, D-91058 ERLANGEN, GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 19期

关键词：

D O I：

10.1063/1.114800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

4H-SiC epilayers grown by chemical vapor deposition were characterized by Hall effect, admittance spectroscopy, low-temperature photoluminescence, and deep level transient spectroscopy (DLTS). The nitrogen (N) donor activation energies were estimated as 45-65 meV at hexagonal and 105-125 meV at cubic sites from Hall effect investigations in agreement with the data taken by admittance spectroscopy. In low-temperature photoluminescence, the N bound exciton peaks were dominant, however, free exciton peaks were also observed. DLTS measurements revealed a low concentration of electron traps (similar to 10(13) cm(-3)) for both samples grown on Si and C faces, indicating cm high-quality epilayers independent of the substrate polarity. (C) 1995 American Institute of Physics.

引用

页码：2833 / 2835

页数：3

共 19 条

[1] ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC
CLEMEN, LL
DEVATY, RP
MACMILLAN, MF
YOGANATHAN, M
CHOYKE, WJ
LARKIN, DJ
POWELL, JA
EDMOND, JA
KONG, HS
[J]. APPLIED PHYSICS LETTERS, 1993, 62 (23) : 2953 - 2955
[2] CLEMEN LL, 1994, SILICON CARBIDE RELA, P251
[3] DALIBOR T, 1995, SILICON CARBIDE RELA
[4] NITROGEN DONORS IN 4H-SILICON CARBIDE
GOTZ, W
SCHONER, A
PENSL, G
SUTTROP, W
CHOYKE, WJ
STEIN, R
LEIBENZEDER, S
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) : 3332 - 3338
[5] PHOTOLUMINESCENCE DETERMINATION OF THE NITROGEN DOPING CONCENTRATION IN 6H-SIC
HENRY, A
KORDINA, O
HALLIN, C
HEMMINGSSON, C
JANZEN, E
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (19) : 2457 - 2459
[6] HOLZLEIN K, 1986, REV SCI INSTRUM, V57, P1373, DOI 10.1063/1.1138603
[7] HIGH-PERFORMANCE OF HIGH-VOLTAGE 4H-SIC SCHOTTKY-BARRIER DIODES
ITOH, A
KIMOTO, T
MATSUNAMI, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1995, 16 (06) : 280 - 282
[8] HIGH-QUALITY 4H-SIC HOMOEPITAXIAL LAYERS GROWN BY STEP-CONTROLLED EPITAXY
ITOH, A
AKITA, H
KIMOTO, T
MATSUNAMI, H
[J]. APPLIED PHYSICS LETTERS, 1994, 65 (11) : 1400 - 1402
[9] EXPERIMENTAL-STUDY OF THE POOLE-FRENKEL EFFECT ON THE SI-TL ACCEPTOR
KELLER, W
PENSL, G
SCHULZ, M
[J]. PHYSICA B & C, 1983, 116 (1-3): : 244 - 251
[10] HIGH-QUALITY 4H-SIC EPITAXIAL LAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION
KORDINA, O
HENRY, A
BERGMAN, JP
SON, NT
CHEN, WM
HALLIN, C
JANZEN, E
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (11) : 1373 - 1375

← 1 2 →