NITROGEN DONORS AND DEEP LEVELS IN HIGH-QUALITY 4H-SIC EPILAYERS GROWN BY CHEMICAL-VAPOR-DEPOSITION

被引：108
作者：
KIMOTO, T
ITOH, A
MATSUNAMI, H
SRIDHARA, S
CLEMEN, LL
DEVATY, RP
CHOYKE, WJ
DALIBOR, T
PEPPERMULLER, C
PENSL, G
机构：
[1] UNIV PITTSBURGH, DEPT PHYS & ASTRON, PITTSBURGH, PA 15260 USA
[2] UNIV ERLANGEN NURNBERG, LEHRSTUHL ANGEW PHYS, D-91058 ERLANGEN, GERMANY
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 19期
关键词：
D O I：
10.1063/1.114800
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
4H-SiC epilayers grown by chemical vapor deposition were characterized by Hall effect, admittance spectroscopy, low-temperature photoluminescence, and deep level transient spectroscopy (DLTS). The nitrogen (N) donor activation energies were estimated as 45-65 meV at hexagonal and 105-125 meV at cubic sites from Hall effect investigations in agreement with the data taken by admittance spectroscopy. In low-temperature photoluminescence, the N bound exciton peaks were dominant, however, free exciton peaks were also observed. DLTS measurements revealed a low concentration of electron traps (similar to 10(13) cm(-3)) for both samples grown on Si and C faces, indicating cm high-quality epilayers independent of the substrate polarity. (C) 1995 American Institute of Physics.
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页码：2833 / 2835
页数：3
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