SCHOTTKY-BARRIER AND SURFACE PHOTOVOLTAGE INDUCED BY SYNCHROTRON-RADIATION IN GAP(110)/AG

被引：14

作者：

CHIARADIA, P ^{[2
]}

BONNET, JE

FANFONI, M

GOLETTI, C

LAMPEL, G

机构：

[1] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

[2] UNIV ROMA TOR VERGATA,DIPARTIMENTO FIS,ROME,ITALY

[3] ECOLE POLYTECH,PHYS MAT CONDENSEE LAB,F-91128 PALAISEAU,FRANCE

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13520

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measure the Schottky-barrier formation and the surface photovoltage induced by synchrotron radiation by complementing photoemission measurements with a Kelvin probe. This combined technique is applied to the Ag/GaP(110) interface, grown at room temperature. Large photovoltage shifts are observed up to high coverage. Based on decomposition of the Ga 3d core-level line shapes and surface photovoltage corrections, we conclude that the evolution of the Fermi level takes place during the deposition of about 15 angstrom, yielding a final Schottky barrier of 1.15 eV.

引用

页码：13520 / 13526

页数：7

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