EFFECT OF HYDROGENATION OF THE LEAKAGE CURRENTS OF LASER-ANNEALED POLYSILICON TFTS

被引：19

作者：

AOYAMA, T

KOIKE, Y

OKAJIMA, Y

KONISHI, N

SUZUKI, T

MIYATA, K

机构：

[1] IBARAKI TECH COLL,HITACHI,JAPAN

[2] HITACHI LTD,MOBARA WORKS,MOBARA,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 09期

关键词：

D O I：

10.1109/16.83729

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of hydrogenation on the leakage currents of laser-annealed polysilicon TFT's was investigated for a low-temperature (< 600-degrees-C) process. Before hydrogenation the laser-annealed TFT's gave larger leakage currents than those without laser annealing. After hydrogenation, however, the leakage currents decreased significantly to values less than those without laser annealing. Two groups of energy levels, deep and shallow, were suggested to account for the leakage current behavior.

引用

收藏

页码：2058 / 2061

页数：4

相关论文

共 10 条

[1] CRYSTALLIZATION OF LPCVD SILICON FILMS BY LOW-TEMPERATURE ANNEALING [J].

AOYAMA, T ;

KAWACHI, G ;

KONISHI, N ;

SUZUKI, T ;

OKAJIMA, Y ;

MIYATA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1169-1173

[2]

AOYAMA T, UNPUB J ELECTROCHEM

[3] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J].

FOSSUM, JG ;

ORTIZCONDE, A ;

SHICHIJO, H ;

BANERJEE, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1878-1884

[4]

Ono K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P256, DOI 10.1109/IEDM.1988.32805

[5] EFFECTS OF THE PRESENCE ABSENCE OF HCL DURING ATE OXIDATION ON THE ELECTRICAL AND STRUCTURAL-PROPERTIES OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

PROANO, RE ;

AST, DG .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) :2189-2199

[6] DEVELOPMENT AND ELECTRICAL-PROPERTIES OF UNDOPED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS [J].

PROANO, RE ;

MISAGE, RS ;

AST, DG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) :1915-1922

[7] XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS [J].

SAMESHIMA, T ;

USUI, S ;

SEKIYA, M .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (05) :276-278

[8]

SERIKAWA T, 1988, 1988 P INT DISPL RES, P222

[9] LASER-RECRYSTALLIZED SILICON THIN-FILM TRANSISTORS ON EXPANSION-MATCHED 800-DEGREES-C GLASS [J].

TROXELL, JR ;

HARRINGTON, MI ;

MILLER, RA .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (12) :576-578

[10] RELATIONSHIPS OF ELECTRICAL-PROPERTIES AND MELTING THRESHOLD IN LASER-ANNEALED ION-IMPLANTED SILICON [J].

WANG, KL ;

LIU, YS ;

BURMAN, C .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :263-265