OBSERVATION OF DOUBLE RIBBONS IN GAAS AND ALGAAS

被引：10

作者：

MCKERNAN, S ^{[1
]}

ZHU, GJ ^{[1
]}

CARTER, CB ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1991年 / 64卷 / 06期

关键词：

D O I：

10.1080/09500839108215115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stacking-fault double-ribbons have been observed in GaAs; a compound semiconductor. Values for the extrinsic and intrinsic stacking-fault energies of 41.2+/- 5 mJ m-2 and 46.5 +/- 6 mJ m-2, respectively, were obtained from the widths of the stacking-fault ribbons. The ratio of the intrinsic to extrinsic stacking-fault energy is found to be 1.13 +/- 0.08.

引用

页码：349 / 355

页数：7

共 12 条

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