GAP-STATE ABSORPTION IN HYDROGENATED AND CHLORINATED AMORPHOUS-SILICON FILMS BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

被引:4
作者
MOSTEFAOUI, R [1 ]
CHEVALLIER, J [1 ]
MEICHENIN, S [1 ]
AUZEL, F [1 ]
机构
[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE
关键词
D O I
10.1016/0022-3093(85)90662-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:307 / 310
页数:4
相关论文
共 2 条
[1]   DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J].
JACKSON, WB ;
AMER, NM .
PHYSICAL REVIEW B, 1982, 25 (08) :5559-5562
[2]   THE USE OF PHOTOTHERMAL DEFLECTION FOR THE STUDY OF THE EFFECTS OF CHLORINE ON THE STATE ABSORPTION OF THE BAND RESTRICTED IN A-SIHCL [J].
MOSTEFAOUI, R ;
CHEVALLIER, J ;
MEICHENIN, S ;
AUZEL, F .
MATERIALS RESEARCH BULLETIN, 1984, 19 (08) :961-968