TOP-SURFACE-EMITTING GAAS 4-QUANTUM-WELL LASERS EMITTING AT 0.85 MU-M

被引：76

作者：

LEE, YH ^{[1
]}

TELL, B ^{[1
]}

BROWNGOEBELER, K ^{[1
]}

JEWELL, JL ^{[1
]}

HOVE, JV ^{[1
]}

机构：

[1] APA OPT INC,BLAINE,MN 55434

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 11期

关键词：

Gallium arsenide; Lasers and laser applications;

D O I：

10.1049/el:19900463

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room temperature CW and pulsed lasing of top-surfaceemitting, vertical-cavity, GaAs quantum-well lasers was achieved at ~845nm. The active gain medium was four 100 A thick GaAs quantum wells. The whole structure was grown by molecular beam epitaxy. Deep H+-ion implantation followed by annealing was used to control a vertical profile of resistivity for an efficient current injection at the active region. The threshold current was 2-2 mA for CW and pulsed operation using 10µm diameter lasers. Differential quantum efficiency was about 20%. Minimum threshold current density per quantum well of 360 A/cm2 was obtained. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：710 / 711

页数：2

共 10 条

[1]

Botez D., 1989, IEEE Photonics Technology Letters, V1, P205, DOI 10.1109/68.36043

[2] BURIED HETEROSTRUCTURE GAAS/GAALAS DISTRIBUTED BRAGG REFLECTOR SURFACE EMITTING LASER WITH VERY LOW THRESHOLD (5.2 MA) UNDER ROOM-TEMPERATURE CW CONDITIONS [J].