A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS

被引：139
作者：
CHAN, TY
KO, PK
HU, C
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 12期
关键词：
D O I：
10.1109/EDL.1984.26006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：505 / 507
页数：3
相关论文
共 6 条
[1]   SIMPLE 2-DIMENSIONAL MODEL FOR IGFET OPERATION IN SATURATION REGION [J].
ELMANSY, YA ;
BOOTHROYD, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :254-262
[2]  
HU C, 1983, IEDM TECH DIG
[3]  
Ko P. K., 1981, International Electron Devices Meeting, P600
[4]  
Sing Y. W., 1980, International Electron Devices Meeting. Technical Digest, P732
[5]   SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION [J].
TAKEDA, E ;
KUME, H ;
TOYABE, T ;
ASAI, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :611-618
[6]   ONE-DIMENSIONAL WRITING MODEL OF N-CHANNEL FLOATING GATE IONIZATION-INJECTION MOS (FIMOS) [J].
TANAKA, S ;
ISHIKAWA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) :1190-1197
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