NMOS SILICIDE POLYSILICON GATES BY LIFT-OFF REACTIVE SPUTTER ETCHING

被引：3
作者：
FRASER, DB
KINSBRON, E
VRATNY, F
JOHNSTON, RL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期
关键词：
D O I：
10.1116/1.571414
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：491 / 492
页数：2
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