EFFECT OF HYDROGEN ON THE DEPOSITION RATE FOR PLANAR RF MAGNETRON SPUTTERING OF HYDROGENATED AMORPHOUS-SILICON

被引：34

作者：

WEBB, JB

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 12期

关键词：

D O I：

10.1063/1.330413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：9043 / 9048

页数：6

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[9] ROLE OF HYDROGEN IN SPUTTERING OF NICKEL-CHROMIUM FILMS [J].

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