BONDING AND STABILITY IN NARROW-GAP TERNARY SEMICONDUCTORS FOR INFRARED APPLICATIONS

被引：22

作者：

WALL, A ^{[1
]}

CAPRILE, C ^{[1
]}

FRANCIOSI, A ^{[1
]}

VAZIRI, M ^{[1
]}

REIFENBERGER, R ^{[1
]}

FURDYNA, JK ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT PHYS,W LAFAYETTE,IN 47907

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.574017

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2010 / 2013

页数：4

共 39 条

[21] INDIRECT EXCHANGE INTERACTION IN DILUTE MAGNETIC SEMICONDUCTORS [J].

LEE, VC ;

LIU, L .

PHYSICAL REVIEW B, 1984, 29 (04) :2125-2130

[22]

LEWICKI A, 1985, ACTA PHYS POL A, V67, P357

[23]

LEY L, 1979, TOPICS APPLIED PHYSI, V27

[24]

MYCIELSKI A, J PHYS C

[25]

MYCIELSKI J, ACTA PHYS POL A

[26] QUASI-SIMULTANEOUS SIMS, AES, XPS, AND TDMS STUDY OF PREFERENTIAL SPUTTERING, DIFFUSION, AND MERCURY EVAPORATION IN CDXHG1-XTE [J].

NITZ, HM ;

GANSCHOW, O ;

KAISER, U ;

WIEDMANN, L ;

BENNINGHOVEN, A .

SURFACE SCIENCE, 1981, 104 (2-3) :365-383

[27] HGCDTE-CR INTERFACE CHEMISTRY [J].

PETERMAN, DJ ;

FRANCIOSI, A .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1305-1306

[28] MAGNETIC BREAKDOWN AND THE SPIN-SPLIT CONDUCTION-BAND IN HGSE AND HG1-XMNXSE [J].

REIFENBERGER, R ;

SCHWARZKOPF, DA .

PHYSICAL REVIEW LETTERS, 1983, 50 (12) :907-916

[29] INITIAL-STAGES OF OXIDE FORMATION ON HGCDTE EXPOSED TO ACTIVATED OXYGEN [J].

SILBERMAN, JA ;

LASER, D ;

LINDAU, I ;

SPICER, WE ;

WILSON, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1706-1711

[30] ROOM-TEMPERATURE STABILITY OF CLEAVED HG1-XCDXTE [J].

SILBERMAN, JA ;

MORGEN, P ;

LINDAU, I ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :154-156

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