ANALYSIS OF POSTSTRESS EFFECTS IN PASSIVATED MOSFETS AFTER HOT-CARRIER STRESS

被引：2

作者：

DESCHRIJVER, E

HEREMANS, P

BELLENS, R

GROESENEKEN, G

MAES, HE

机构：

[1] IMEC vzw, 3001 Leuven

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90259-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Passivated n-channel transistors of different technologies still show interface trap density increases after termination of hot-carrier stress. A systematic study of this effect and its dependence on various parameters was made, using the Charge-Pumping technique. A tentative model is presented, that explains the observed phenomena.

引用

页码：437 / 440

页数：4

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