GROWTH OF COAL/III-V PSEUDOMORPHIC HETEROSTRUCTURES BY MBE

被引:0
|
作者
HARBISON, JP
SANDS, T
FLOREZ, LT
CHEEKS, TL
RAMESH, R
ALLEN, SJ
TABATABAIE, N
NAHORY, RE
KERAMIDAS, VG
KALMAN, ZH
JOO, GC
TSAKALAKOS, T
机构
[1] BELLCORE,RED BANK,NJ 07701
[2] RUTGERS STATE UNIV,COLL ENGN,PISCATAWAY,NJ 08855
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:41 / 41
页数:1
相关论文
共 50 条
  • [1] EPITAXIAL METAL(NIAL) SEMICONDUCTOR(III-V) HETEROSTRUCTURES BY MBE
    SANDS, T
    HARBISON, JP
    TABATABAIE, N
    CHAN, WK
    GILCHRIST, HL
    CHEEKS, TL
    FLOREZ, LT
    KERAMIDAS, VG
    SURFACE SCIENCE, 1990, 228 (1-3) : 1 - 8
  • [2] MBE growth and doping of III-V nitrides
    Ng, HM
    Doppalapudi, D
    Korakakis, D
    Singh, R
    Moustakas, TD
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 349 - 353
  • [3] III-V MBE GROWTH SYSTEMS.
    Davies, Graham
    Williams, David
    1985, : 15 - 46
  • [4] Reducing the defect density in MBE-ZnSe/III-V heterostructures
    Warlick, EL
    Ho, E
    Petrich, GS
    Kolodziejski, LA
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 564 - 570
  • [5] Growth of III-V semiconductor nanowires and their heterostructures
    Li, Ang
    Zou, Jin
    Han, Xiaodong
    SCIENCE CHINA-MATERIALS, 2016, 59 (01) : 51 - 91
  • [6] Current understanding of growth mechanisms in III-V MBE
    Foxon, C.T., 1600, (95): : 1 - 4
  • [7] CURRENT UNDERSTANDING OF GROWTH MECHANISMS IN III-V MBE
    FOXON, CT
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 11 - 16
  • [8] MBE GROWTH OF ALGAAS/NIAL/ALGAAS HETEROSTRUCTURES - A NOVEL EPITAXIAL III-V SEMICONDUCTOR METAL SYSTEM
    HARBISON, JP
    SANDS, T
    TABATABAIE, N
    CHAN, WK
    FLOREZ, LT
    KERAMIDAS, VG
    JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 425 - 426
  • [9] Nucleation and growth mechanisms during MBE of III-V compounds
    Ctr. Electron. Mat. Devices Dept. P., Imperial College, SW7 2BZ, London, United Kingdom
    不详
    不详
    Mater Sci Eng B Solid State Adv Technol, 1 (7-16):
  • [10] Nucleation and growth mechanisms during MBE of III-V compounds
    Joyce, BA
    Vvedensky, DD
    Bell, GR
    Belk, JG
    Itoh, M
    Jones, TS
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 67 (1-2): : 7 - 16