TUNNELING MICROSCOPY AND SPECTROSCOPY OF MOLECULAR-BEAM EPITAXY GROWN GAAS-ALGAAS INTERFACES

被引：135

作者：

ALBREKTSEN, O ^{[1
]}

ARENT, DJ ^{[1
]}

MEIER, HP ^{[1
]}

SALEMINK, HWM ^{[1
]}

机构：

[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期

关键词：

D O I：

10.1063/1.103563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first observation of GaAs/AlGaAs compound multilayers and interfaces at atomic scale resolution. Using a scanning tunneling microscope, the atomic registry in the epitaxial layers and their interfaces was observed. The semiconductor band gaps and valence-band offsets relative to the Fermi level are obtained via local spectroscopy in the GaAs and AlGaAs multilayers.

引用

页码：31 / 33

页数：3

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