CHARACTERISTICS OF WN/GAAS SCHOTTKY CONTACTS FORMED BY REACTIVE RF SPUTTERING

被引：39
作者：
YAMAGISHI, H
机构：
[1] Toshiba Corp, Komukai Works,, Kawasaki, Jpn, Toshiba Corp, Komukai Works, Kawasaki, Jpn
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 12期
关键词：
D O I：
10.1143/JJAP.23.L895
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
TRANSISTORS, FIELD EFFECT
引用
收藏
页码：L895 / L898
页数：4
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