PREPARATION OF SN-DOPED IN2O3 FILMS BY RF SPUTTERING

被引：0

作者：

BACHNER, FJ ^{[1
]}

FAN, JCC ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C89 / C89

页数：1

共 50 条

[1] PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY RF SPUTTERING
FAN, JCC
BACHNER, FJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1719 - 1725
[2] Solvothermal preparation and characteristics of Sn-doped In2O3
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[3] Solvothermal preparation and characteristics of Sn-doped In2O3
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[4] Solvothermal preparation and characteristics of Sn-doped In2O3
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Journal of Central South University of Technology, 2008, 15 (06) : 763 - 767
[5] SUPERCONDUCTIVITY IN TRANSPARENT SN-DOPED IN2O3 FILMS
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JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) : 1327 - 1338
[6] Superconductivity in transparent Sn-doped In2O3 films
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[7] PREPARATION OF SN-DOPED IN2O3 (ITO) FILMS AT LOW DEPOSITION TEMPERATURES BY ION-BEAM SPUTTERING
FAN, JCC
APPLIED PHYSICS LETTERS, 1979, 34 (08) : 515 - 517
[8] OPTICAL PROPERTIES OF RF REACTIVE SPUTTERED Sn-DOPED In2O3 FILMS.
Shinoki, Fujitoshi
Yoshida, Sadafumi
Ohhata, Yutaka
Bulletin of the Electrotechnical Laboratory, Tokyo, 1980, 44 (1-2): : 109 - 114
[9] ELECTRICAL PROPERTIES OF RF REACTIVE SPUTTERED Sn-DOPED In2O3 FILMS.
Shinoki, Fujitoshi
Yoshida, Sadafumi
Ohhata, Yutaka
Bulletin of the Electrotechnical Laboratory, Tokyo, 1980, 44 (1-2): : 115 - 120
[10] Magnetron sputtering behavior of Sn-doped In2O3 ceramic target
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