HIGH-EFFICIENCY AL0.2GA0.8AS/SI STACKED TANDEM SOLAR-CELLS USING EPITAXIAL LIFT-OFF

被引：8
作者：
ZAHRAMAN, K
GUILLAUME, JC
NATAF, G
BEAUMONT, B
LEROUX, M
GIBART, P
机构：
[1] Laboratoire de Physique du Solide et Energie Solaire, Centre National de Ia Recherche Scientifique, Sophia Antipotis, Valbonne, 06560, Rue Bernard Gregory
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 10期
关键词：
STACKED TANDEM CELLS; (AL; GA)AS ALLOYS; METALORGANIC VAPOR PHASE EPITAXY; EPITAXIAL LIFT-OFF; MINORITY CARRIER LIFETIME;
D O I：
10.1143/JJAP.33.5807
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper, the potential of high conversion efficiency of solar energy through the combination of Al0.2Ga0.8As and Si cells is illustrated by a mechanically stacked tandem using, for the first time, the epitaxial lift-off (ELO) technique to remove the top cell from its substrate. The selective etching of the GaAs substrate provides efficient light transmission to the bottom cell. Photoluminescence decay experiments show that substrate removal also enhances photon recycling effects. The measured efficiency of the Al0.2Ga0.8As/Si tandem reaches 21% AM1.5.
引用
收藏
页码：5807 / 5810
页数：4
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