SIMULATION OF EXPLOSIVE CRYSTALLIZATION IN PULSED LASER IRRADIATED A-SI

被引:5
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AYDINLI, A
GUNDUC, Y
TOPACLI, C
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10.1088/0022-3727/22/5/019
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O59 [应用物理学];
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页码:693 / 698
页数:6
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共 18 条
[1]  
[Anonymous], 1982, LASER ANNEALING SEMI
[2]   MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797
[3]   TIME-RESOLVED REFLECTIVITY MEASUREMENTS DURING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON [J].
BRUINES, JJP ;
VANHAL, RPM ;
BOOTS, HMJ ;
POLMAN, A ;
SARIS, FW .
APPLIED PHYSICS LETTERS, 1986, 49 (18) :1160-1162
[4]  
BRUINES JJP, 1984, APPL PHYS LETT, V48, P1252
[5]   EXPLOSIVE CRYSTALLIZATION IN SILICON [J].
GEILER, HD ;
GLASER, E ;
GOTZ, G ;
WAGNER, M .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3091-3099
[6]  
Goldsmith A., 1961, HDB THERMOPHYSICAL P
[7]   PULSED LASER-HEATING CALCULATIONS INCORPORATING VAPORIZATION [J].
JAIN, AK ;
KULKARNI, VN ;
SOOD, DK .
APPLIED PHYSICS, 1981, 25 (02) :127-133
[8]   EXPLOSIVE CRYSTALLIZATION STARTING FROM AN AMORPHOUS-SILICON SURFACE REGION DURING LONG-PULSE LASER IRRADIATION [J].
MURAKAMI, K ;
ERYU, O ;
TAKITA, K ;
MASUDA, K .
PHYSICAL REVIEW LETTERS, 1987, 59 (19) :2203-2206
[9]   PULSED LASER MELTING OF AMORPHOUS-SILICON LAYERS [J].
NARAYAN, J ;
WHITE, CW .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :35-37
[10]  
NARAYAN J, 1984, MATER RES SOC S P, V23, P179