SCHOTTKY-BARRIER COUPLED SCHOTTKY-BARRIER GATE GAAS-FET LOGIC

被引：0

作者：

HASHIZUME, N ^{[1
]}

YAMADA, H ^{[1
]}

KOJIMA, T ^{[1
]}

MATSUMOTO, K ^{[1
]}

机构：

[1] MEIJI UNIV,FAC ENGN,KAWASAKI,KANAGAWA 222,JAPAN

来源：

INSTITUTE OF PHYSICS CONFERENCE SERIES | 1982年 / 63期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：557 / 562

页数：6

共 8 条

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[4]

HASHIZUME N, 1981, ELECTRON LETT, V16, P51

[5] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

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[6] CAPACITOR-COUPLED LOGIC USING GAAS DEPLETION-MODE FETS [J].

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ELECTRONICS LETTERS, 1980, 16 (19) :749-750

[7] GAAS MESFET LOGIC WITH 4-GHZ CLOCK RATE [J].

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[8]

YOKOYAMA N, 1981, IEEE ISSCC, P218

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