THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y

被引:195
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DUTTA, NK
NELSON, RJ
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10.1063/1.329942
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O59 [应用物理学];
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页码:74 / 92
页数:19
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共 54 条
[1]   AMBIPOLAR TRANSPORT IN DOUBLE HETEROSTRUCTURE INJECTION-LASERS [J].
ANTHONY, PJ ;
SCHUMAKER, NE .
ELECTRON DEVICE LETTERS, 1980, 1 (04) :58-60
[2]   OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J].
ANTONCIK, E ;
LANDSBERG, PT .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527) :337-&
[3]   ONE-DIMENSIONAL OVERLAP FUNCTIONS AND THEIR APPLICATION TO AUGER RECOMBINATION IN SEMICONDUCTORS [J].
BEATTIE, AR ;
LANDSBERG, PT .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1295) :486-495
[4]   AUGER EFFECT IN SEMICONDUCTORS [J].
BEATTIE, AR ;
LANDSBERG, PT .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29
[5]   RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION [J].
BEATTIE, AR ;
SMITH, G .
PHYSICA STATUS SOLIDI, 1967, 19 (02) :577-&
[6]   AUGER RECOMBINATION IN GAAS AN GASB [J].
BENZ, G ;
CONRADT, R .
PHYSICAL REVIEW B, 1977, 16 (02) :843-855
[7]   POSSIBLE MECHANISM FOR RADIATIONLESS RECOMBINATION IN SEMICONDUCTORS [J].
BESS, L .
PHYSICAL REVIEW, 1957, 105 (05) :1469-1475
[8]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
[9]  
BONCHBRUEVICH VL, 1960, FIZ TVERD TELA, V2, P465
[10]   CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].
CASEY, HC ;
STERN, F .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643