CONDUCTION MECHANISM OF HIGHLY CONDUCTIVE AND TRANSPARENT ZINC-OXIDE THIN-FILMS PREPARED BY MAGNETRON SPUTTERING

被引：173
|
作者：
MINAMI, T
SATO, H
OHASHI, K
TOMOFUJI, T
TAKATA, S
机构：
[1] Electron Device System Laboratory, Kanazawa Institute of Technology, Nonoichi, Ishikawa, 921
来源：
JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(92)90778-H
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
This report describes the results of experimental and theoretical studies of the electrical properties of highly conductive and transparent ZnO thin films prepared by magnetron sputtering. The mobilities of undoped and Al-doped ZnO (AZO) films (carrier concentration 10(20)-10(21) cm-3), which are relatively independent of the crystal quality, are mainly dominated by ionized impurity scattering. The relationship between the carrier concentration and the mobility of AZO films can be interpreted by the Brooks-Herring theory when both the degeneracy and nonparabolicity of the conduction band are taken into account. The origin of carriers in AZO films is also discussed.
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页码：370 / 374
页数：5
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