LIMITATION OF TI/TIN DIFFUSION BARRIER LAYERS IN SILICON TECHNOLOGY

被引：33
作者：
NORSTROM, H
NYGREN, S
WIKLUND, P
OSTLING, M
BUCHTA, R
PETERSSON, CS
机构：
来源：
VACUUM | 1985年 / 35卷 / 12期
关键词：
D O I：
10.1016/0042-207X(85)90314-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：547 / 553
页数：7
相关论文
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