ENTROPY CALCULATION BEYOND THE HARMONIC APPROXIMATION - APPLICATION TO DIFFUSION BY CONCERTED EXCHANGE IN SI

被引:40
作者
PANDEY, KC [1 ]
KAXIRAS, E [1 ]
机构
[1] USN,RES LAB,COMPLEX SYST THEORY BRANCH,WASHINGTON,DC 20375
关键词
D O I
10.1103/PhysRevLett.66.915
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present a formulation for calculating entropy based on the application of classical transition-rate theory to quantum-mechanical energy surfaces. Using this approach, which avoids difficulties due to anharmonicity and large energy barriers, we calculate the entropy of concerted exchange (CE) in Si and find it to be 3.3k in the high-temperature regime. The relatively high entropy of CE is traced to multiple equivalent exchange paths and to a combination of a stiff mode at the equilibrium and a soft mode at the saddle-point configurations. Comparison to harmonic-approximation results shows substantial differences, both in the low- and in the high-temperature limits.
引用
收藏
页码:915 / 918
页数:4
相关论文
共 15 条
[1]   MIGRATION OF INTERSTITIALS IN SILICON [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469
[2]   BARRIER TO MIGRATION OF THE SILICON SELF-INTERSTITIAL [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1129-1132
[3]  
BARYAM Y, 1985, MATERIALS SCI FORUM, V10, P19
[4]  
BARYAM Y, 1985, MRS S P, V46
[5]  
BENNET CH, 1975, DIFFUSION SOLIDS
[6]   1ST-PRINCIPLES CALCULATIONS OF DIFFUSION-COEFFICIENTS - HYDROGEN IN SILICON [J].
BLOCHL, PE ;
VAN DE WALLE, CG ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1990, 64 (12) :1401-1404
[7]   PROTON DIFFUSION IN CRYSTALLINE SILICON [J].
BUDA, F ;
CHIAROTTI, GL ;
CAR, R ;
PARRINELLO, M .
PHYSICAL REVIEW LETTERS, 1989, 63 (03) :294-297
[8]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817
[9]  
CAR R, 1985, DEFECTS SEMICONDUCTO, V10, P115
[10]  
FRANK W, 1985, DIFFUSION SOLIDS, V2