STRUCTURAL INVESTIGATION OF THE A-GA1-XASX SYSTEM

被引：22

作者：

BAKER, SH

MANSSOR, MI

GURMAN, SJ

BAYLISS, SC

DAVIS, EA

机构：

[1] UNIV LEICESTER,DEPT PHYS & ASTRON,LEICESTER LE1 7RH,ENGLAND

[2] LOUGHBOROUGH UNIV TECHNOL,DEPT PHYS,LOUGHBOROUGH LE11 3TU,LEICS,ENGLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 144卷 / 01期

关键词：

D O I：

10.1016/S0022-3093(05)80383-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

a-Ga1-xAsx (x > 0.5) films have been prepared by rf sputtering. The local structure and bonding configurations in these films have been investigated by EXAFS measurements. The As-coordination is shown to change from fourfold at stoichiometry towards threefold for As-rich films, while the Ga-coordination remains at 4 throughout the composition range studied. The EXAFS data are correlated with optical (visible and infrared) absorption experiments undertaken on the same films to provide a consistent picture of the local structure.

引用

页码：63 / 69

页数：7

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