STRUCTURAL AND ELECTRICAL-PROPERTIES OF PLASMA-DEPOSITED SILICON-NITRIDE FROM SIH4-N2 GAS-MIXTURE

被引：38

作者：

ZHOU, NS

FUJITA, S

SASAKI, A

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 01期

关键词：

D O I：

10.1007/BF02657920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：55 / 72

页数：18

共 20 条

[1] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES [J].

CHOW, R ;

LANFORD, WA ;

WANG, KM ;

ROSLER, RS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5630-5633

[2] CHARACTERIZATION OF PLASMA SILICON-NITRIDE LAYERS [J].

CLAASSEN, WAP ;

VALKENBURG, WGJN ;

HABRAKEN, FHPM ;

TAMMINGA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2419-2423

[3] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[4] COMPOSITION AND CHEMICAL-BONDS IN SILICON-NITRIDE BY SIH4-N2 GAS-MIXTURE PLASMA CVD [J].

FUJITA, S ;

ZHOU, NS ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02) :L100-L102

[5] VARIATIONS OF TRAP STATES AND DANGLING BONDS IN CVD-SI3N4 LAYER ON SI SUBSTRATE BY NH3/SIH4 RATIO [J].

FUJITA, S ;

TOYOSHIMA, H ;

NISHIHARA, M ;

SASAKI, A .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :795-812

[6] PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES [J].

GERETH, R ;

SCHERBER, W .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1248-&

[7] R F PLASMA DEPOSITION OF SILICON-NITRIDE LAYERS [J].

HELIX, MJ ;

VAIDYANATHAN, KV ;

STREETMAN, BG ;

DIETRICH, HB ;

CHATTERJEE, PK .

THIN SOLID FILMS, 1978, 55 (01) :143-148

[8] QUANTITATIVE DETECTION OF OXYGEN IN SILICON-NITRIDE ON SILICON [J].

HOLLOWAY, PH ;

STEIN, HJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) :723-728

[9] REACTIONS OF ATOMIC-HYDROGEN IN THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON BY GLOW-DISCHARGE AND REACTIVE SPUTTERING [J].

KAMPAS, FJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6408-6412

[10] PLASMA-ENHANCED DEPOSITION OF SILICON-NITRIDE FROM SIH4-N2 MIXTURE [J].

KATOH, K ;

YASUI, M ;

WATANABE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (05) :L321-L323

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