STRUCTURAL PERFECTION IN POORLY LATTICE MATCHED HETEROSTRUCTURES

[1] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[2] DODSON BW, 1988, APPL PHYS LETT, V53, P848

[3] MULTIPLICATION PROCESSES FOR SLOW MOVING DISLOCATIONS [J]. PHYSICAL REVIEW, 1950, 79 (04): : 722 - 723

[4] NEW TYPE OF SOURCE GENERATING MISFIT DISLOCATIONS [J]. APPLIED PHYSICS, 1978, 17 (01): : 85 - 87

[5] Hirth J. P., 1986, South African Journal of Physics, V9, P72

[6] DAMAGE OF COHERENT MULTILAYER STRUCTURES BY INJECTION OF DISLOCATIONS OR CRACKS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2372 - 2376

[7] Lothe J., 1982, THEORY DISLOCATIONS

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) : 273 - 280

[10] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273

[1] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1325 - 1327

[2] DODSON BW, 1988, APPL PHYS LETT, V53, P848

[3] MULTIPLICATION PROCESSES FOR SLOW MOVING DISLOCATIONS [J]. PHYSICAL REVIEW, 1950, 79 (04): : 722 - 723

[4] NEW TYPE OF SOURCE GENERATING MISFIT DISLOCATIONS [J]. APPLIED PHYSICS, 1978, 17 (01): : 85 - 87

[5] Hirth J. P., 1986, South African Journal of Physics, V9, P72

[6] DAMAGE OF COHERENT MULTILAYER STRUCTURES BY INJECTION OF DISLOCATIONS OR CRACKS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2372 - 2376

[7] Lothe J., 1982, THEORY DISLOCATIONS

[8] MATTHEWS JW, 1974, J CRYST GROWTH, V27, P118, DOI 10.1016/0022-0248(74)90424-2

[9] DEFECTS IN EPITAXIAL MULTILAYERS .2. DISLOCATION PILE-UPS, THREADING DISLOCATIONS, SLIP LINES AND CRACKS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 29 (03) : 273 - 280

[10] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273