EXPERIMENTAL-DETERMINATION OF IMPACT IONIZATION COEFFICIENTS IN (100) GAAS

被引：127
作者：
BULMAN, GE
ROBBINS, VM
BRENNAN, KF
HESS, K
STILLMAN, GE
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源：
IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 06期
关键词：
D O I：
10.1109/EDL.1983.25697
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：181 / 185
页数：5
相关论文
共 24 条
[1]   THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J].
ANDERSON, CL ;
CROWELL, CR .
PHYSICAL REVIEW B, 1972, 5 (06) :2267-&
[2]   IONIZATION COEFFICIENT MEASUREMENT IN GAAS BY USING MULTIPLICATION NOISE CHARACTERISTICS [J].
ANDO, H ;
KANBE, H .
SOLID-STATE ELECTRONICS, 1981, 24 (07) :629-634
[3]   ELECTRO-ABSORPTION PRODUCED MIXED INJECTION AND ITS EFFECT ON THE DETERMINATION OF IONIZATION COEFFICIENTS [J].
BULMAN, GE ;
COOK, LW ;
STILLMAN, GE .
SOLID-STATE ELECTRONICS, 1982, 25 (12) :1189-1200
[4]   OBSERVATION OF ELECTRONIC BAND-STRUCTURE EFFECTS ON IMPACT IONIZATION BY TEMPERATURE TUNING [J].
CAPASSO, F ;
NAHORY, RE ;
POLLACK, MA ;
PEARSALL, TP .
PHYSICAL REVIEW LETTERS, 1977, 39 (11) :723-726
[5]   TEMPERATURE-DEPENDENCE OF IMPACT IONIZATION RATES IN GAAS BETWEEN 20-DEGREES AND 200-DEGREES-C [J].
CAPASSO, F ;
NAHORY, RE ;
POLLACK, MA .
ELECTRONICS LETTERS, 1979, 15 (04) :117-118
[6]   ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].
CAPASSO, F ;
TSANG, WT ;
HUTCHINSON, AL ;
WILLIAMS, GF .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40
[7]   THE CHANNELING AVALANCHE PHOTO-DIODE - A NOVEL ULTRA-LOW-NOISE INTERDIGITATED P-N-JUNCTION DETECTOR [J].
CAPASSO, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1388-1395
[8]   SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - COMMENT [J].
CAPASSO, F ;
PEARSALL, TP ;
THORNBER, KK ;
NAHORY, RE ;
POLLACK, MA ;
BACHELET, GB ;
CHELIKOWSKY, JR .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3324-3326
[9]   MONTE-CARLO SIMULATION OF IMPACT IONIZATION IN GAAS INCLUDING QUANTUM EFFECTS [J].
CHANG, YC ;
TING, DZY ;
TANG, JY ;
HESS, K .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :76-78
[10]   IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].
CHIN, R ;
HOLONYAK, N ;
STILLMAN, GE ;
TANG, JY ;
HESS, K .
ELECTRONICS LETTERS, 1980, 16 (12) :467-469
123