MEASUREMENTS OF DISTRIBUTION OF DEFECT INTRODUCTION RATE WITH DEPTH IN SILICON IRRADIATED WITH 300-KEV ELECTRONS

被引：10
作者：
HITCHCOCK, AJ
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 07期
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D O I：
10.1063/1.1782111
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：2726 / +
页数：1
相关论文
共 16 条
[1]  
DEARNALEY G, 1961, R3662 AERE HARW REPT
[2]  
FAN HY, 1955, SOLID STATE PHYS, V1, P283
[3]   DISTRIBUTION OF ELECTRON-BOMBARDMENT-INDUCED RADIATION DEFECTS WITH DEPTH IN SILICON [J].
FLICKER, H ;
LOFERSKI, JJ .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2146-+
[4]  
GEORGE GG, 1964, 7 P INT C SEM PHYS S, P385
[5]  
GERETH RK, 1964, SCDC64346 SAND CORP, P67
[6]  
HARKNESS S, 1964, ELECTRON ENG, P622
[7]  
HEMMENT PLF, PRIVATE COMMUNICATIO
[8]   ELECTRON BOMBARDMENT OF SILICON [J].
HILL, DE .
PHYSICAL REVIEW, 1959, 114 (06) :1414-1420
[9]  
JONSCHER AK, 1960, PRINCIPLES SEMICONDU, P107
[10]  
SAITO H, 1963, J PHYS SOC JAPAN S3, V18, P246
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