MESOPLASMAS AND 2ND BREAKDOWN IN SILICON JUNCTIONS

被引：43
作者：
ENGLISH, AC
机构：
来源：
SOLID-STATE ELECTRONICS | 1963年 / 6卷 / 05期
关键词：
D O I：
10.1016/0038-1101(63)90036-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：511 / 521
页数：11
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