IR AND ELECTRICAL-PROPERTIES OF THIN SILICON OXYNITRIDE FILMS SYNTHESIZED BY ION-IMPLANTATION

被引:16
作者
YADAV, AD
JOSHI, MC
机构
关键词
D O I
10.1016/0040-6090(82)90122-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:45 / 53
页数:9
相关论文
共 17 条
[1]   PROPERTIES OF SIXOYNZ FILMS ON SI [J].
BROWN, DM ;
GRAY, PV ;
HEUMANN, FK ;
PHILIPP, HR ;
TAFT, EA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :311-&
[2]  
Bube R.H., 1960, PHOTOCONDUCTIVITY SO
[3]   FILMS OF SILICON NITRIDE-SILICON DIOXIDE MIXTURES [J].
CHU, TL ;
SZEDON, JR ;
LEE, CH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :318-&
[4]  
DEARNALEY G., 1973, ION IMPLANTATION
[5]   FORMATION OF THIN SIO2-FILMS BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON AND THEIR INVESTIGATION BY IR TECHNIQUES [J].
DYLEWSKI, J ;
JOSHI, MC .
THIN SOLID FILMS, 1976, 35 (03) :327-336
[6]   THIN SIO2-FILMS FORMED BY OXYGEN ION-IMPLANTATION IN SILICON - ELECTRON-MICROSCOPE INVESTIGATIONS OF SI-SIO2 INTERFACE STRUCTURES AND THEIR C-V CHARACTERISTICS [J].
DYLEWSKI, J ;
JOSHI, MC .
THIN SOLID FILMS, 1976, 37 (02) :241-248
[7]   DIELECTRIC-BREAKDOWN PROPERTIES AND IV CHARACTERISTICS OF THIN SIO2-FILMS FORMED BY HIGH DOSE OXYGEN ION-IMPLANTATION INTO SILICON [J].
DYLEWSKI, J ;
JOSHI, MC .
THIN SOLID FILMS, 1977, 42 (02) :227-235
[8]  
HIRVONEN JK, 1980, ION IMPLANTATION TRE, V18
[9]   PROPERTIES OF SIO2-FILMS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J].
KIROV, KI ;
ATANASOVA, ED ;
ALEXANDROVA, SP ;
AMOV, BG ;
DJAKOV, AE .
THIN SOLID FILMS, 1978, 48 (02) :187-192
[10]  
KOMROV FF, 1978, RAD EFFECTS, V39, P163