PREPARATION AND PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY A CONSECUTIVE, SEPARATED REACTION CHAMBER METHOD

被引：29

作者：

KUWANO, Y

OHNISHI, M

TSUDA, S

NAKASHIMA, Y

NAKAMURA, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 03期

关键词：

D O I：

10.1143/JJAP.21.413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：413 / 417

页数：5

共 9 条

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[5]

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[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

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[9]

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