CORRELATION OF ELECTRICAL-RESISTIVITY ANOMALIES AND CRYSTAL-STRUCTURE IN COPPER-GERMANIUM THIN-FILM ALLOYS

被引：14

作者：

ABOELFOTOH, MO ^{[1
]}

TAWANCY, HM ^{[1
]}

KRUSINELBAUM, L ^{[1
]}

机构：

[1] KING FAHD UNIV PETR & MINERALS,RES INST,DHAHRAN 31261,SAUDI ARABIA

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 12期

关键词：

D O I：

10.1063/1.110715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a nonmonotonic dependence of electrical resistivity on Ge concentration in Cu-Ge thin-film alloys containing 0-40 at.% Ge. This behavior is corrected with structural changes occurring in the alloys as the Ge concentration is increased. The resistivity is found to remain remarkably low (typically less than 10 muOMEGA cm) over a range of Ge concentration extending from 25 to 35 at.%.

引用

页码：1622 / 1624

页数：3

共 18 条

[1] COPPER PASSIVATION OF BORON IN SILICON AND BORON REACTIVATION KINETICS
ABOELFOTOH, MO
SVENSSON, BG
[J]. PHYSICAL REVIEW B, 1991, 44 (23): : 12742 - 12747
[2] ELECTRICAL TRANSPORT IN THIN-FILMS OF COPPER SILICIDE
ABOELFOTOH, MO
KRUSINELBAUM, L
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (06) : 3382 - 3384
[3] ABOELFOTOH MO, UNPUB
[4] BARRETT CS, 1966, STRUCTURE METALS, P358
[5] ENERGY-LEVELS IN SILICON
CHEN, JW
MILNES, AG
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228
[6] COPPER, LITHIUM, AND HYDROGEN PASSIVATION OF BORON IN C-SI
ESTREICHER, SK
[J]. PHYSICAL REVIEW B, 1990, 41 (08): : 5447 - 5450
[7] MOBILITY OF IMPURITY IONS IN GERMANIUM AND SILICON
FULLER, CS
SEVERIENS, JC
[J]. PHYSICAL REVIEW, 1954, 96 (01): : 21 - 24
[8] ELECTROLYSIS OF COPPER IN SOLID SILICON
GALLAGHER, CJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) : 82 - &
[9] Goldstein J.I., 1986, PRINCIPLES ANAL ELEC, P155
[10] SPECULAR BOUNDARY SCATTERING AND ELECTRICAL TRANSPORT IN SINGLE-CRYSTAL THIN-FILMS OF COSI2
HENSEL, JC
TUNG, RT
POATE, JM
UNTERWALD, FC
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (16) : 1840 - 1843

← 1 2 →