EXTRINSIC GETTERING VIA THE CONTROLLED INTRODUCTION OF MISFIT DISLOCATIONS

被引:26
作者
SALIH, AS
KIM, HJ
DAVIS, RF
ROZGONYI, GA
机构
[1] North Carolina State Univ at, Raleigh, Materials Engineering Dep,, Raleigh, NC, USA, North Carolina State Univ at Raleigh, Materials Engineering Dep, Raleigh, NC, USA
关键词
DEFECT DENSITY - EXTRINSIC GETTERING - MISFIT DISLOCATIONS - NOMARSKY OPTICAL MICROSCOPY;
D O I
10.1063/1.95598
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:419 / 421
页数:3
相关论文
共 13 条
[1]  
BORLAND JO, 1984, ASTM STP, V850, P49
[2]  
DELLOCA CJ, 1982, VLSI SCI TECHNOLOGY, P5
[3]  
DYSON W, 1983, DEFECTS SILICON, P246
[4]   CRITICAL MICROSTRUCTURE FOR ION-IMPLANTATION GETTERING EFFECTS IN SILICON [J].
GEIPEL, HJ ;
TICE, WK .
APPLIED PHYSICS LETTERS, 1977, 30 (07) :325-327
[5]   DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON [J].
HU, SM .
APPLIED PHYSICS LETTERS, 1977, 31 (02) :53-55
[6]  
Maszara W., 1984, VLSI Science and Technology-1984. Proceedings of the Second International Symposium on Very Large Scale Integration Science and Technology. Materials for High Speed/High Density Applications, P36
[7]   POISONING AND GETTERING EFFECTS IN SILICON JUNCTIONS [J].
METS, EJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (04) :420-&
[8]  
PEARCE CW, 1982, VLSI SCI TECHNOLOGY, P53
[9]   ELIMINATION OF OXIDATION-INDUCED STACKING-FAULTS BY PREOXIDATION GETTERING OF SILICON WAFERS .1. PHOSPHORUS DIFFUSION-INDUCED MISFIT DISLOCATIONS [J].
ROZGONYI, GA ;
PETROFF, PM ;
READ, MH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1725-1729
[10]   GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS [J].
ROZGONYI, GA ;
PEARCE, CW .
APPLIED PHYSICS LETTERS, 1978, 32 (11) :747-749