DRY ETCHING AND IMPLANT ISOLATION CHARACTERISTICS OF ALXGA1-XAS GROWN BY METAL ORGANIC MOLECULAR-BEAM EPITAXY

被引：4

作者：

PEARTON, SJ

ABERNATHY, CR

REN, F

FULLOWAN, TR

机构：

[1] AT&T Bell Lab, Murray Hill

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 11期

关键词：

17;

D O I：

10.1088/0268-1242/6/11/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the dry etching rates of highly doped, n- and p-type AlxGa1-xAs in PCl3/Ar, CCl2F2/Ar and CH4/H2/Ar electron cyclotron resonance plasmas. These etching rates are independent of doping level and conductivity type for all three gas mixtures, and a significant dependence of etch rate on AlAs mole fraction is observed only with CCl2F2/Ar. The formation of high resistivity layers by oxygen or hydrogen ion bombardment was also investigated as a function of implant dose, Al composition and post-implant annealing temperature. Approximately 10 electrons or holes were removed from the conduction process for each 120 keV O+ ion, whereas a 40 keV proton removed about 0.3 carriers per ion. Sheet resistances above 10(8) OMEGA-square-1 are obtainable for heavily doped n- or p-type AlGaAs provided the oxygen or proton doses are sufficiently high.

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页码：1042 / 1047

页数：6

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