TRANSPORT AND PERSISTENT PHOTOCONDUCTIVITY IN INGAAS/INP SINGLE QUANTUM-WELLS

被引：25

作者：

ANDERSON, DA

BASS, SJ

KANE, MJ

TAYLOR, LL

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 20期

关键词：

D O I：

10.1063/1.97324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1360 / 1362

页数：3

共 13 条

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[6] STUDY OF PERSISTENT PHOTOCONDUCTIVITY EFFECT IN N-TYPE SELECTIVELY DOPED ALGAAS/GAAS HETEROJUNCTION [J].

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[7] HIGH MAGNETIC-FIELD STUDIES OF THE TWO-DIMENSIONAL ELECTRON-GAS IN GALNAS-INP SUPER-LATTICES [J].

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[8]

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[10] TWO-DIMENSIONAL ELECTRON-GAS IN A SELECTIVELY DOPED INP/IN0.53GA0.47AS HETEROSTRUCTURE GROWN BY CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY [J].

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