MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR

被引：50

作者：

MAO, BY ^{[1
]}

CHANG, PH ^{[1
]}

LAM, HW ^{[1
]}

SHEN, BW ^{[1
]}

KEENAN, JA ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LAB,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.96672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：794 / 796

页数：3

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