TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON LATERAL REACTION OF GAAS WITH NI

被引：13

作者：

CHEN, SH

CARTER, CB

PALMSTROM, CJ

OHASHI, T

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

[2] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 12期

关键词：

D O I：

10.1063/1.96675

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：803 / 805

页数：3

共 19 条

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[12]

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[13] ALLOYING REACTION IN THIN NICKEL FILMS DEPOSITED ON GAAS [J].

OGAWA, M .

THIN SOLID FILMS, 1980, 70 (01) :181-189

[14]

PALMSTROM CJ, 1985, GALLIUM ARSENIDE MAT, pCH6

[15] TOPOTACTIC REACTION BETWEEN NICKEL AND GALLIUM-ARSENIDE [J].

SCOBEY, IH ;

WALLACE, CA ;

WARD, RCC .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1973, 6 (DEC1) :425-437

[16] SILICIDE FORMATION IN LATERAL DIFFUSION COUPLES [J].

ZHENG, LR ;

HUNG, LS ;

MAYER, JW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :758-761

[17] LATERAL DIFFUSION OF NI AND SI THROUGH NI2SI IN NI/SI COUPLES [J].

ZHENG, LR ;

HUNG, LS ;

MAYER, JW ;

MAJNI, G ;

OTTAVIANI, G .

APPLIED PHYSICS LETTERS, 1982, 41 (07) :646-649

[18]

ZHENG LR, 1984, MATER RES SOC S P, V25, P75

[19]

ZHENG LR, 1985, MATER RES SOC S P, V37, P579

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