CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS

被引：63

作者：

BACCARANI, G

JACOBONI, C

MAZZONE, AM

机构：

[1] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

[2] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

[3] CNR,LAMEL LAB,I-40126 BOLOGNA,ITALY

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 01期

关键词：

D O I：

10.1016/0038-1101(77)90026-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：5 / 10

页数：6

共 13 条

[1] ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES [J].

BARNOSKI, MK ;

LOPER, DD .

SOLID-STATE ELECTRONICS, 1973, 16 (04) :433-&

[2] DIFFUSION NEAR AN ABSORBING BOUNDARY [J].

BERZ, F .

SOLID-STATE ELECTRONICS, 1974, 17 (12) :1245-1255

[3] ELECTRON DRIFT VELOCITY IN SILICON [J].

CANALI, C ;

JACOBONI, C ;

NAVA, F ;

OTTAVIANI, G ;

ALBERIGIQUARANTA, A .

PHYSICAL REVIEW B, 1975, 12 (06) :2265-2284

[4] ELECTRON-DRIFT-VELOCITY MEASUREMENTS IN SILICON AT HIGH TEMPERATURES AND THEIR EMPIRICAL RELATION TO ELECTRIC-FIELD [J].

CANALI, C ;

MAJNI, G ;

MINDER, R ;

OTTAVIANI, G .

ELECTRONICS LETTERS, 1974, 10 (24) :523-524

[5]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[6]

CONWELL EM, 1950, PHYS REV, V79, P1013

[7] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J].

CROWELL, CR .

SOLID-STATE ELECTRONICS, 1969, 12 (01) :55-&

[8] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[9] FULLY ION-IMPLANTED BIPOLAR-TRANSISTORS [J].

PAYNE, RS ;

SCAVUZZO, RJ ;

OLSON, KH ;

NACCI, JM ;

MOLINE, RA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (04) :273-278

[10] THERMIONIC SATURATION OF DIFFUSION CURRENTS IN TRANSISTORS [J].

PERSKY, G .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1345-&

← 1 2 →