Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods

被引：1
作者：
An Tielei [1 ]
Sun Bo [1 ]
Wei Tongbo [1 ]
Zhao Lixia [1 ]
Duan Ruifei [1 ]
Liao Yuanxun [2 ]
Li Jinmin [1 ]
Yi Futing [2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 11期
基金：
中国国家自然科学基金;
关键词：
freestanding GaN; flip chip; LED; CsCl; wet etching; light extraction;
D O I：
10.1088/1674-4926/34/11/114006
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes (FS-FCLEDs) using two-step roughening methods is investigated. The output power of LEDs fabricated by using one-step and two-step roughening methods are compared. The results indicate that two-step roughening methods show more potential for light extraction. Compared with flat FS-FCLEDs, the output power of FS-FCLEDs with a nanotextured hemisphere surface shows an enhancement of 90.7%.
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页数：4
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