SWITCHING CHARACTERISTICS IN AMORPHOUS-SEMICONDUCTORS

被引：8

作者：

MIYAZONO, T ^{[1
]}

AKIBA, Y ^{[1
]}

IIDA, M ^{[1
]}

机构：

[1] TOKAI UNIV,FAC ENGN,DEPT ELECTR,HIRATSUKA,KANAGAWA,JAPAN

来源：

关键词：

D O I：

10.1143/JJAP.14.969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：969 / 976

页数：8

共 19 条

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[12] ELECTRICAL SWITCHING IN MOBILITY-GAP MATERIALS [J].

IIDA, M ;

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[13]

Lampert M. A., 1970, CURRENT INJECTION 1, P72

[14]

SHAW MP, 1972, PHYS REV LETT, V31, P408

[15] HIGH FIELD EFFECTS IN CHALCOGENIDE THIN-FILMS [J].

STUBB, T ;

SUNTOLA, T ;

TIAINEN, OJA .

[16]

TABAK MD, 1971, J NONCRYST SOLIDS, V6, P357

[17] ELECTRONIC BASIS OF SWITCHING IN AMORPHOUS SEMICONDUCTOR ALLOYS [J].

VANROOSBROECK, W .

[18]

VANROOSBROECK W, 1972, PHYS REV B, V5, P2145

[19]

WEY HY, 1972, J NONCRYSTALL SOLIDS, V8, P336