NEW ELECTRONIC STATES ON CLEAN SI(110)-16X2 SURFACES

被引：4
作者：
CRICENTI, A
NESTERENKO, B
PERFETTI, P
LELAY, G
SEBENNE, C
机构：
[1] INST SEMICOND PHYS,KIEV 252650,UKRAINE
[2] CTR RECH MECAN CROISSANCE CRISTALLINE,CNRS,UPR 7251,F-13288 MARSEILLE 9,FRANCE
[3] UNIV PARIS 06,PHYS SOLIDES LAB,CNRS,URA 154,F-75252 PARIS 05,FRANCE
来源：
SURFACE REVIEW AND LETTERS | 1995年 / 2卷 / 05期
关键词：
D O I：
10.1142/S0218625X95000546
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electronic properties of a clean Si(110)-''16 x 2'' surface have been studied by angle-reserved ultraviolet photoelectron spectroscopy (ARUPS) and surface differential reflectivity (SDR). Four surface states have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR experiments revealed transitions between filled and empty surface states at similar to 1.8, 2.4, and 2.9 eV. The results are explained on the basis of a new structural model of the Si(110)-''16 x 2'' phase.
引用
收藏
页码：573 / 577
页数：5
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