A SILICON TECHNOLOGY FOR ACTIVE HIGH-FREQUENCY CIRCUITS

被引：5
|
作者：
STROHM, KM
BUECHLER, J
LUY, JF
SCHAFFLER, F
机构：
[1] Daimler Benz Research Center, D-7900 Ulm
来源：
MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(92)90529-Z
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Monolithic integrated IMPATT diodes are manufactured as millimeter wave power generators in slot line resonator-antennas. Silicon molecular beam epitaxy (Si-MBE) is used for the growth of the active layers. A fabrication process with a self stopping etchant, self aligned contacts, silicon nitride passivation and air-bridge technology is used. The emitted radiation of the millimeter wave transmitter chip is 2.6 mW at 90.6 GHz in cw-operation and 50 mW at 92 GHz in pulsed operation.
引用
收藏
页码：717 / 720
页数：4
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