HIGH-TEMPERATURE DEPLETION-MODE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BETA-SIC THIN-FILMS

被引：98

作者：

PALMOUR, JW

KONG, HS

DAVIS, RF

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 24期

关键词：

D O I：

10.1063/1.98282

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2028 / 2030

页数：3

共 15 条

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[9] EPITAXIAL-GROWTH OF BETA-SIC THIN-FILMS ON 6H ALPHA-SIC SUBSTRATES VIA CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1986, 49 (17) :1074-1076

[10] TEMPERATURE-DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN N-TYPE BETA-SIC GROWN VIA CHEMICAL VAPOR-DEPOSITION [J].

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APPLIED PHYSICS LETTERS, 1987, 51 (06) :442-444

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